Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip
Description
PROCESS
CP285
Power TransistorNPN - Silicon Power Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 105 x 105 MILS 9.5 MILS 32 x 22 MILS 33 x 24 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY GROSS DIE PER 5...
