PROCESS
CP283
Power Transistor
NPN - Silicon Power Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS ...
PROCESS
CP283
Power
Transistor
NPN - Silicon Power
Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 68 x 68 MILS 9.5 MILS 18 x 11 MILS 18 x 12 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY GROSS DIE PER 5 INCH WAFER 3,675 PRINCIPAL DEVICE TYPES MJE13003
www.DataSheet4U.com
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (20-January 2006)
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