SST32HF201

Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF201 / SST32HF202 / SST32HF401 / SST32HF402 SST32HF201 / 202 / 401 / 4022Mb Flash + 1Mb SRAM, 2Mb Flash + 2Mb SRAM, 4Mb Flash + 1Mb SRAM, 4Mb Flash + 2Mb SRAM (x16) MCP ComboMemories Preliminary Specifications FEATURES: MPF + SRAM ComboMemory – SST32HF201: 128K x16 Flash + 64K x16 SRAM – SST32HF202: 128K x16 Flash + 128K x16 SRAM – SST32HF401: 256K x16 Flash + 64K x16 SRAM – SST32HF402: 256K x16 Flash + 128K x16 SRAM Single 2.7-3.3V Read and Write Operations Concurrent Operation – Read from or write to SRAM while Erase/Program Flash Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical) Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks Fast Read Access Times: – Flash: 70 and 90 ns – SRAM: 70 and 90 ns Latched Address and Data for Flash Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF201/202: 2 seconds (typical) SST32HF401/402: 4 seconds (typical) Flash Automatic Erase and Program Timing – Internal VPP Generation Flash End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Conforms to Flash pinout Packag...