2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching Regulator Applications
U...
2SK4111
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching
Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.5 150 -55 to 150 A W mJ A mJ °C °C Unit V V V
Pulse (t = 1 ms) (Note 1)
JEDEC JEITA TOSHIBA
— SC-67 2-10R1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range www.DataSheet4U.com
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test re...