AP2428GEY

AP2428GEY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 30V 27mΩ 5.9A ID Description D1 D2 G2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.com I @T =70℃ D A Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating 30 ±10 5.9 4.7 30 1.39 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ IDM PD@TA=25℃ TSTG TJ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 201031051-1/4 AP2428GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5A VGS=4V, ID=5A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold ...