N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2422GY
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ ...
Description
AP2422GY
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS compliant
2928-8 D2 D2 D1 D1
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G2 S2 G1 S1
30V 40mΩ 4.8A
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
G1 D1 D2
G2 S1 S2
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃
www.DataSheet4U.com I @T =70℃
D A
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±12 4.8 3.8 20 1.39 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
IDM PD@TA=25℃ TSTG TJ
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200816053-1/4
AP2422GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 0.5 -
Typ. 0.02 9 3 1.3 4 10 11 17 5 480 90 70 1.5
Max. Units 32 40 60 1.2 1 10 ±100 5 770 2.3 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF...
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