Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10...
Power
Transistors
2SC4533
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
I Features
High-speed switching
High collector to base voltage VCBO Wide area of safe operation (ASO)
Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one
/ screw
14.0±0.5 Solder Dip
(4.0)
e pe) I Absolute Maximum Ratings TC = 25°C
c e. d ty Parameter
Symbol Rating
Unit
n d stag tinue Collector to base voltage
VCBO
500
V
le on Collector to emitter voltage
VCES
500
V
a elifecyc disc VCEO
400
V
n u t ed, Emitter to base voltage
VEBO
7
V
duc typ Peak collector current
ICP
6
A
te tin Pro ued Collectorcurrent
IC
3
A
four ntin Base current
IB
1.2
A
ing isco Collector power TC = 25°C
PC
30
W
in n llow d d dissipation
Ta = 25°C
2
s fo lane Junction temperature
Tj
150
°C
de , p Storage temperature
Tstg
−55 to +150
°C
φ 3.1±0.1
1.4±0.1 0.8±0.1
1.3±0.2 0.5+–00..12
2.54±0.3
5.08±0.5
123
1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F-A1 Package
a cotinued incalnuce type I Electrical Characteristics TC = 25°C
M is n ten Parameter
Symbol
Conditions
isco ain Collector cutoff current e/D e, m Emitter cutoff current
D anc typ Collector to emitter voltage
inten nce Forward current transfer ratio Ma aintena Collector to emitter saturation voltage d m ...
