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CPDT-12V

Comchip Technology

SMD ESD Protection Diode

SMD ESD Protection Diode SMD Diodes Specialist CPDT-12V Features (RoHS Device) Common anode ESD protection. IEC61000-...


Comchip Technology

CPDT-12V

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Description
SMD ESD Protection Diode SMD Diodes Specialist CPDT-12V Features (RoHS Device) Common anode ESD protection. IEC61000-4-2 8kV(Contact), 15kV(air). Surface mount package. High component density. 0.119(3.00) 0.110(2.80) SOT-23 Mechanical data Case: SOT-23 Standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750D, method 2026. Marking code:E12 Mounting position: Any. Weight: 0.0078 gram(approx.). 3 0.056(1.40) 0.047(1.20) 1 0.079(2.00) 0.071(1.80) 2 0.006(0.15) 0.002(0.05) 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.008(0.20) min Dimensions in inches and (millimeter) Maximum Rating and Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter www.DataSheet4U.com Diode breakdown voltage Leakage current Junction capacitance ESD capability Clamping voltage Peak pulse power Operation temperature Storage temperature Conditions I R = 1mA V R = 12V V R =0V,f =1MHz IEC 61000-4-2(air) IEC 61000-4-2(contact) IPP = 1A,TP=8/20us TP=8/20us Symbol Min Typ Max Unit V BD IL CT ESD VC P PP Tj T STG -55 13 17 0.1 12 2.0 V uA pF 16 8 25 25 125 150 kV V W °C °C REV:A QW-BP023 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CPDT-12V) Fig. 1 - 8/20us Peak pulse current wave form acc. IEC 61000-4-5 100% 10u 8 us to 100% Fig. 2 - Reverse characteristics 80% Reverse current ( A ) 20 30 40 1u 60% I PPM 20 us to 50us 4...




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