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SKiiP 32 NAB 12 Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C
MiniSKIIP 3 SEMIKRON integrated intelligent Power SKiiP 32 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M3
Bridge Rectifier VRRM Theatsink = 80 °C ID tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT - Inverter IC = 50 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 50 A; Tj = 125 °C tr Rgon = Rgoff = 22 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper VCEsat IC = 25 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 25 A; Tj = 125 °C tr www.DataSheet4U.com Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 50 A, VR = – 600 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C per diode Rthjh Temperature Sensor T = 25 / 100 °C RTS min. – – – – – – – – – – – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 44 ns 100 56 ns 500 380 ns 100 70 mJ – 13 nF – 3,3 K/W 0,5 – V 2,5(3,1) 3,0(3,7) ns 150 75 ns 130 65 ns 600 400 ns 100 50 mJ – 6,2 nF – 1,65 K/W 1,0 – V 2,0(1,8) 2,5(2,3) V 1,2 1,0 mΩ 22 16 A – 40 µC – 8,0 mJ – 2,0 K/W 1,0 – 1,2 – 1000 / 1670 – 1,6 V K/W Ω Nm
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UL recognized file no. E63532
• •
specification of temperature sensor see part A common characteristics B 16 – 4
Options • also available with powerful chopper. For characteristics please refer to Inverter IGBT
1) 2)
Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery)
Mechanical Data 2 – 2,5 case to heatsink, SI Units M1 M3 Case mechanical outline see page B 16 – 9 * For diagrams of the Chopper IGBT please refer to SKiiP 30 NAB 12 © by SEMIKRON
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0698
B 16 – 59
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IC [A] 100 17V 80 15V 13V 60 11V 9V 40 7V
32NA1201.vpo
20
0 0 1 2 3 4 5 VCE [V]
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 22 Ω
Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 50 A
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Fig. 3 Turn-on /-off energy = f (IC)
VGE [V] 20 18 16 14 600V
32NA1205
Fig. 4 Turn-on /-off energy = f (RG) ICpuls = 50 A
800V
C [nF] 100
32NA1206
VGE = 0 V f = 1 MHz
10
12 10 8 6 4 2 0 0 100 200 300 400 QG [nC]
0,1 0 10 20 30 40 VCE [V] 1 Coss Crss Ciss
Fig. 5 Typ. gate charge characteristic.
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