IRFP4668PBF

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D VDSS RDS(on) typ. 200V 8.0m: max. 9.7m: 130A S ID D G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 130 92 520 520 3.5 ± 30 57 -55 to + 175 300 10lbxin (1.1Nxm) 760 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C www.DataSheet4U.com Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface Junction-to-Ambient ij Typ. ––– 0.24 ––– Max. 0.29 ––– 40 Units °C/W www.irf.com 1 9/8/08 IRFP4668PbF Static @ TJ = 25°C (unless otherwise specified) Symbol ...