N-Channel Enhancement Mode Power MosFET
STT2622
Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[
N-Channel Enhancement Mode Power Mos.FET
Description
The ST...
Description
STT2622
Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[
N-Channel Enhancement Mode Power Mos.FET
Description
The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SOT-26 is universally used for all commercial-industrial applications.
Features
* RoHS Compliant * Low Gate Charge * Surface Mount Package
D1 S1 5 D2 4
D1
D2
6
REF. A A1 A2 c D E E1
Date Code
2622
G1
G2
1 G1 2 S2 3 G2
S1
S2
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter
www.DataSheet4U.com Drain-Source Voltage
Symbol
VDS VGS
Ratings
50
±20
Unit
V V mA mA A W
W/ C
o o
Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
3 3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
o
520 410 1.5 0.8 0.006
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
Rthj-a
Ratings
150
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
STT2622
Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8 £[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unl...
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