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SSG4575 Dataheets PDF



Part Number SSG4575
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Datasheet SSG4575 DatasheetSSG4575 Datasheet (PDF)

SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC.

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SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 0 o 8 o 1.35 1.75 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www.DataSheet4U.com Gate-Source Voltage Symbol VDS VGS Ratings N-Channel 60 ±20 P-Channel -60 ±20 -4.2 -3.3 -30 2 Unit V V A A A W W/ C o o Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o 6 4.7 30 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 0.016 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET o N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 o Unless otherwise specified) Typ. _ Symbol BVDSS BVDS/ Tj Min. 60 _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A o 0.04 _ _ _ _ _ _ VGS(th) IGSS IDSS 1.0 _ _ _ _ 3.0 ±100 1 25 36 42 29 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m £[ Total Gate Charge 2 18 5 10 10 6 32 10 1670 160 117 8 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=5A VDS=48V VGS=4.5V _ _ _ _ VDD=30V ID=1A nS VGS=10V RG=3.3£[ RD=30 £[ 2670 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=4A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Symbol VDS Trr Qrr Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.7A, VGS=0V. Is= 5A, VGS=0V dl/dt=100A/uS _ _ 34 48 _ _ nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. o 3.Surface mounted on 1 in 2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET o N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ Electrical Characteristics P-Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 o o Unless otherwise specified) Typ. _ Symbo BVDSS BVDS/ Tj Min. -60 _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-60V,VGS=0 VDS=-48V,VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A o -0.04 _ _ _ _ _ _ VGS(th) IGSS IDSS -1.0 _ _ _ _ -3.0 ± 100 -1 -25 72 88 34 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m £[ Total Gate Charge 2 21 5 9 12 6 82 36 1780 157 130 6 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4A VDS=-48V VGS=-4.5V _ _ _ _ VDS=-30V ID=-1A nS VGS=-10V RG=3.3£[ RD=30£[ 2850 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-4A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Symbol VDS Trr Qrr Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.7A, VGS=0V. Is=-4A, VGS=0V dl/dt=100A/uS _ _ 43 87 _ _ nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. o 3.Surface mounted.


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