Document
SSG4575
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
4.80 5.00
0.10~0.25
0 o 8
o
1.35 1.75
Features
* Simple Drive Requirement * Lower On-resistance
D1 8 D1 7 D2 6 D2 5
Dimensions in millimeters
D1
D2
* Fast Switching Performance
Date Code
4575SS
G1 S1 G2
1 S1
2 G1
3 S2
4 G2
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
www.DataSheet4U.com Gate-Source Voltage
Symbol
VDS VGS
Ratings N-Channel
60
±20
P-Channel
-60
±20 -4.2 -3.3 -30 2
Unit
V V A A A W
W/ C
o o
Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
o
6 4.7 30
3
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
0.016
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
62.5
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 7
SSG4575
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[
Electrical Characteristics N Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2
o
Unless otherwise specified)
Typ.
_
Symbol
BVDSS BVDS/ Tj
Min.
60
_
Max.
_
_
Unit
V V/ C V nA uA uA
o
Test Condition
VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A
o
0.04
_ _ _ _ _ _
VGS(th) IGSS
IDSS
1.0
_ _ _ _
3.0
±100
1 25 36 42 29
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m £[
Total Gate Charge
2
18 5 10 10 6 32 10 1670 160 117 8
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
nC
ID=5A VDS=48V VGS=4.5V
_
_ _ _
VDD=30V ID=1A nS VGS=10V RG=3.3£[ RD=30 £[
2670
_ _
pF
VGS=0V VDS=25V f=1.0MHz
_
_
S
VDS=10V, ID=4A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time 2 Reverse Recovery Charge
Symbol
VDS
Trr Qrr
Min.
_
Typ.
_
Max.
1.2
Unit
V
Test Condition
IS=1.7A, VGS=0V.
Is= 5A, VGS=0V dl/dt=100A/uS
_ _
34 48
_ _
nS nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. o 3.Surface mounted on 1 in 2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 7
SSG4575
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[
Electrical Characteristics P-Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2
o o
Unless otherwise specified)
Typ.
_
Symbo
BVDSS BVDS/ Tj
Min.
-60
_
Max.
_ _
Unit
V V/ C V nA uA uA
o
Test Condition
VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-60V,VGS=0 VDS=-48V,VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A
o
-0.04
_ _ _ _ _ _
VGS(th) IGSS
IDSS
-1.0
_ _ _ _
-3.0
± 100
-1 -25 72 88 34
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m £[
Total Gate Charge
2
21 5 9 12 6 82 36 1780 157 130 6
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
nC
ID=-4A VDS=-48V VGS=-4.5V
_
_ _ _
VDS=-30V ID=-1A nS VGS=-10V RG=3.3£[ RD=30£[
2850
_ _
pF
VGS=0V VDS=-25V f=1.0MHz
_
_
S
VDS=-10V, ID=-4A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time 2 Reverse Recovery Charge
Symbol
VDS
Trr Qrr
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
IS=-1.7A, VGS=0V.
Is=-4A, VGS=0V dl/dt=100A/uS
_ _
43 87
_ _
nS nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. o 3.Surface mounted.