N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
N Channel 6.9A, 30V,RDS(ON) 28m£[ P Ch...
Description
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
N Channel 6.9A, 30V,RDS(ON) 28m£[ P Channel -6.3A, -30V,RDS(ON) 36m£[
SSG4503
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG4503 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
4.80 5.00
0.10~0.25
Features
* Simple Drive Requirement * Lower On-Resistance
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1 8
D1 7
D2 6
D2 5
D1 D2
* Fast Switching Performance
Date Code
4503SS
G1 G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
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Parameter
Symbol
VDS VGS 30
±20
o
Ratings
-30
±20 -6.3 -5 -30 2.0 0.016
Unit
V V A A A W
W/ C
o o
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
6.9 5.5 30
T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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