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SSG4501

SeCoS Halbleitertechnologie GmbH

Enhancement Mode Power MOSFET

Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m£[ P Channel -5.3A, -30V,RDS(ON) 50m £[ SSG4501 Enhancement Mo...


SeCoS Halbleitertechnologie GmbH

SSG4501

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Description
Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m£[ P Channel -5.3A, -30V,RDS(ON) 50m £[ SSG4501 Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4501 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 Features * Simple Drive Requirement * Lower On-resistance 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4501SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings www.DataSheet4U.com Parameter Symbol VDS VGS 30 ±20 o Ratings -30 ±20 -5.3 -4.7 -20 2.0 0.016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 7 5.8 20 T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 9 Elekt...




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