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SSG4435

SeCoS Halbleitertechnologie GmbH

P-Channel MOSFET

Elektronische Bauelemente SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Produ...


SeCoS Halbleitertechnologie GmbH

SSG4435

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Description
Elektronische Bauelemente SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES  Low on-resistance  Simple Drive Requirement  Fast switching MARKING 4435SC    = Date Code SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ SOP-8 3K LeaderSize 13’ inch S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Ratings -30 Gate-Source Voltage VGS ±20 Continuous Drain Current 3 Pulsed Drain Current 1.2 TA = 25°C ID -8 TA = 70°C -6 IDM -50 Power Dissipation Maximum Junction to Ambient 3 PD 2.5 RθJA 50 Linear Derating Factor 0.02 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 Unit V V A A W °C / W W / °C °C http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. B Any changes of specification will not be informed individua...




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