SSG4403

SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES z z z Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 www.DataSheet4U.com Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg Ratings -30 ±12 -6.1 -5.1 -60 2.5 -55 ~ +150 0.02 Unit V V A A A W ℃ W/℃ Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rθj-amb Value 50 Unit ℃/W 01-June-2005 Rev. A Page 1 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Curre...