Document
STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5
Datasheet
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
Features
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
TO-220 1 2 3
TO-247
3 2 1
D(2, TAB)
Order codes
VDS
RDS(on) max.
STB42N65M5
STF42N65M5 STP42N65M5
650 V
79 mΩ
STW42N65M5
•
Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
ID 33 A
Applications
G(1) S(3)
• Switching applications
Description
AM01475v1_noZen
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Product status links STB42N65M5 STF42N65M5 STP42N65M5 STW42N65M5
DS6033 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office.
www.st.com
STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, TO-220, TO-247
TO-220FP
VGS
Gate-source voltage
±25
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
33 20.8
33(1) 20.8 (1)
IDM(2)
Drain current (pulsed)
132
132
PTOT
Total power dissipation at TC = 25 °C
190
40
dv/dt(3)
Peak diode recovery voltage slope
15
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)
2500
TJ
Operating junction temperature range
Tstg
Storage temperature range
-55 to 150
1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 33 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS (peak) < V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
D²PAK
RthJC
Thermal resistance, junctionto-case
RthJA
Thermal resistance, junctionto-ambient
30(1)
1. When mounted on an 1 inch² FR-4, 2 Oz copper board.
Value TO-220 TO-247 0.66
62.5
50
TO-220FP 3.1 62.5
Symbol IAR EAS
Table 3. Avalanche characteristics
Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value 7
950
Unit V A A W
V/ns V °C °C
Unit °C/W °C/W
Unit A mJ
DS6033 - Rev 5
page 2/23
STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. On/off states
Symbol V(BR)DSS
Parameter Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
IGSS
Gate body leakage current
VGS(th)
Gate threshold voltage
RDS(on)
Static drain-source on-resistance
1. Specified by design, not tested in production.
Test conditions ID = 1 mA, VGS = 0 V VGS = 0 V, VDS = 650 V VGS = 0 V, VDS = 650 V, TC = 125 °C (1) VGS = ±25 V, VDS= 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 16.5 A
Min. Typ. Max. Unit
650
V
1
µA 100
±100 nA
3
4
5
V
70
79
mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
4650
-
pF
-
110
-
pF
-
3.2
-
pF
Co(tr) (1) Co(er) (2)
Equivalent capacitance time related
Equivalent capacitance
energy related
VDS = 0 to 520 V, VGS = 0 V
-
285
-
pF
-
100
-
pF
Rg
Gate input resistance
f = 1 MHz, ID = 0 A
-
1.1
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 520 V, ID = 33 A,
-
98
-
nC
VGS = 0 to 10 V
-
28
-
nC
(see Figure 19. Test circuit for gate
charge behavior)
-
39
-
nC
1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value.
2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value.
Symbol td(v) tr(v) tf(i)
tc(off)
Parameter Voltage delay time Voltage rise time Current fall time
Crossing time
Table 6. Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 400 V, ID = 20 A,
-
52
-
ns
RG = 4.7 Ω, VGS = 10 V
-
8.4
-
ns
(see Figure 20. Test circuit for
-
8.7
-
ns
inductive load switching and diode
recovery times and
Figure 23. Switching time
-
14
-
ns
waveform)
DS6033 - Rev 5
page 3/23
STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
-
33
A
ISDM(1)
Source-drain current (pulsed)
-
132
A
VSD(2) trr Qrr
IRRM
Forward on voltage Reverse recovery time Reverse recovery charge
Reverse recovery current
ISD = 33 A, VGS = 0 V
-
ISD = 33 A, di/dt = 100 A/µs,
-
VDD = 100 V
-
(see Figur.