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STP42N65M5 Dataheets PDF



Part Number STP42N65M5
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel Power MOSFET
Datasheet STP42N65M5 DatasheetSTP42N65M5 Datasheet (PDF)

STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5 Datasheet N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Features TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 33 A Applications G(1) S(3).

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STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5 Datasheet N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Features TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 33 A Applications G(1) S(3) • Switching applications Description AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB42N65M5 STF42N65M5 STP42N65M5 STW42N65M5 DS6033 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office. www.st.com STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value D²PAK, TO-220, TO-247 TO-220FP VGS Gate-source voltage ±25 Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C 33 20.8 33(1) 20.8 (1) IDM(2) Drain current (pulsed) 132 132 PTOT Total power dissipation at TC = 25 °C 190 40 dv/dt(3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 TJ Operating junction temperature range Tstg Storage temperature range -55 to 150 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 33 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS (peak) < V(BR)DSS. Table 2. Thermal data Symbol Parameter D²PAK RthJC Thermal resistance, junctionto-case RthJA Thermal resistance, junctionto-ambient 30(1) 1. When mounted on an 1 inch² FR-4, 2 Oz copper board. Value TO-220 TO-247 0.66 62.5 50 TO-220FP 3.1 62.5 Symbol IAR EAS Table 3. Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Value 7 950 Unit V A A W V/ns V °C °C Unit °C/W °C/W Unit A mJ DS6033 - Rev 5 page 2/23 STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate body leakage current VGS(th) Gate threshold voltage RDS(on) Static drain-source on-resistance 1. Specified by design, not tested in production. Test conditions ID = 1 mA, VGS = 0 V VGS = 0 V, VDS = 650 V VGS = 0 V, VDS = 650 V, TC = 125 °C (1) VGS = ±25 V, VDS= 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 16.5 A Min. Typ. Max. Unit 650 V 1 µA 100 ±100 nA 3 4 5 V 70 79 mΩ Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 4650 - pF - 110 - pF - 3.2 - pF Co(tr) (1) Co(er) (2) Equivalent capacitance time related Equivalent capacitance energy related VDS = 0 to 520 V, VGS = 0 V - 285 - pF - 100 - pF Rg Gate input resistance f = 1 MHz, ID = 0 A - 1.1 - Ω Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 520 V, ID = 33 A, - 98 - nC VGS = 0 to 10 V - 28 - nC (see Figure 19. Test circuit for gate charge behavior) - 39 - nC 1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value. 2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value. Symbol td(v) tr(v) tf(i) tc(off) Parameter Voltage delay time Voltage rise time Current fall time Crossing time Table 6. Switching times Test conditions Min. Typ. Max. Unit VDD = 400 V, ID = 20 A, - 52 - ns RG = 4.7 Ω, VGS = 10 V - 8.4 - ns (see Figure 20. Test circuit for - 8.7 - ns inductive load switching and diode recovery times and Figure 23. Switching time - 14 - ns waveform) DS6033 - Rev 5 page 3/23 STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 33 A ISDM(1) Source-drain current (pulsed) - 132 A VSD(2) trr Qrr IRRM Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, VGS = 0 V - ISD = 33 A, di/dt = 100 A/µs, - VDD = 100 V - (see Figur.


STF42N65M5 STP42N65M5 STW42N65M5


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