Power Transistors
2SB1490
Silicon PNP epitaxial planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amp...
Power
Transistors
2SB1490
Silicon
PNP epitaxial planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amplification Complementary to 2SD2250 ■ Features
Optimum for 80 W HiFi output High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)
26.0±0.5
20.0±0.5 φ 3.3±0.2
5.0±0.3 (3.0)
(3.0)
(1.5)
(1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −160 −140 −5 −7 −12 90 3.5 150 −55 to +150 °C °C Unit V V V A A W B
1 2 10.9±0.5
20.0±0.5 (2.5) Solder Dip
3
1: Base 2: Collector 3: Emitter TOP-3L-A1 Package
Internal Connection
C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter www.DataSheet4U.com Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*
Conditions IC = −30 mA, IB = 0 VCB = −160 V, IE = 0 VCE = −140 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 A VCE = −5 V,...
