Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output...
Ordering number:ENN677D
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic.
Package Dimensions
unit:mm 2022A
[2SB816/2SD1046]
3.5 15.6 14.0 2.6 3.2 4.8 2.0
1.6
2.0 20.0 0.6
1.0 1 0.6 2 3
1.3
1.2 15.0 20.0
( ) : 2SB816
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Conditions
1.4
Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150 –40 to +150
Unit V V V A A W
˚C ˚C
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Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, VCE=(–)5V, IC=(–)1A IC=(–)5A 60* 20 15 (220) 160 MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 200* Unit mA mA
VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Rank hFE D 60 t...