WTM3904

WTM3904 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: * Collector-Emitter Voltage:VCEO=40V * Complementary to WTM3906 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otheerwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage www.DataSheet4U.com Symbol VCBO VCEO VEBO IC PD Tj Tstg Value 60 40 6.0 200 1.0 150 -55 to +150 Unit V V V mA W ˚C ˚C Collector to Base Voltage Collector Current Total Device Disspation TA=25°C Junction Temperature Storage Temperature WEITRON http://www.weitron.com.tw 1/4 28-Dec-05 WTM3904 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=10µA, IE=0 Collector-Emitter Breakdown Voltage IC=1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=10µA, IC=0 Collector Cut-Off Current VCE=30V, VBE=3V ON CHARACTERISTICS1 DC Current Gain VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA Collector-Emitter Saturation Voltage IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA Collector-Emitter Saturation Voltage IC=10mA, IB=1.0mA www.DataSheet4U.com IC=50mA, IB=5.0mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=20V, IC=10mA, f=100MHz Output Capacitance VCB=5.0V, IE=0, f=1.0MHz Note1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% fT Cob 300 4.0 MHz pF hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat) 40 70 100 60 30 650 300 200 300 850 950 Symbol BVCBO BVCEO BVEBO ICEX Min 60 40 6.0 Typ Max 50 U...