WTM2907A

WTM2907A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 Features: * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Device Marking WTM2907A = 2907A , p2F ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-10µA, IE=0 Symbol BVCBO BVCEO BVEBO ICBO ICEX Min -60 -60 -5 Typ Max -10 -50 Unit V V V nA nA Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -60 -60 -5 -0.6 1.2 +150 -55 to +150 Unit V V V A W ˚C ˚C Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-10µA, IC =0 Collector Cutoff Current VCE =-50V, IE=0 Collector Cutoff Current VCE =-30V, VBE =-0.5V WEITRON http://www.weitron.com.tw 1/4 24-Mar-06 WTM2907A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-10V, I C =-0.1mA VCE=-10V, I C =-1.0mA VCE=-10V, I C =-10mA VCE=-10V, I C =-150mA VCE=-10V, I C =-500mA Collector-Emitter Saturation Voltage IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA Base-Emitter Saturation Voltage IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% DYNAMIC CHARACTERISTICS Transition Fre...