STB14NM50N

STB14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Features Order code VDS @ TJmax RDS(on) max ID STB14NM50N 550 V 0.32 Ω 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram 'Ć7$% * Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 $0Y Order code STB14NM50N Table 1. Device summary Marking Package 14NM50N D²PAK Packaging Tape and reel June 2014 This is information on a product in full production. DocID024666 Rev 1 1/15 www.st.com Contents Contents STB14NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . ...