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STB18NF25

ST Microelectronics

N-Channel MOSFET

STB18NF25 Datasheet Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a D²PAK package TAB...


ST Microelectronics

STB18NF25

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STB18NF25 Datasheet Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code STB18NF25 VDS 250 V RDS(on) max. 165 mΩ ID 17 A AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications Switching applications G(1) Description S(3) This Power MOSFET has been developed using STMicroelectronics' unique AM01475v1_noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB18NF25 Product summary Order code STB18NF25 Marking 18NF25 Package D²PAK Packing Tape and reel DS14370 - Rev 1 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com STB18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operat...




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