Document
PEMD19; PUMD19
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
Rev. 01 — 17 February 2005 Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1: Product overview Package Philips PEMD19 PUMD19 SOT666 SOT363 JEITA SC-88 PNP/PNP complement PEMB19 PUMB19 NPN/NPN complement PEMH19 PUMH19
Type number
1.2 Features
s s s s Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost
1.3 Applications
s Low current peripheral driver s Control of IC inputs s Replacement of general-purpose transistors in digital applications
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1.4 Quick reference data
Table 2: Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) Conditions open base Min 15.4 Typ 22 Max 50 100 28.6 Unit V mA kΩ
Philips Semiconductors
PEMD19; PUMD19
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
2. Pinning information
Table 3: Pin 1 2 3 4 5 6 Pinning Description GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1
TR1
Simplified outline
6 5 4
Symbol
6 5 4
R1 TR2
1
2
3
001aab555
R1
1
2
3
006aaa269
3. Ordering information
Table 4: Ordering information Package Name PEMD19 PUMD19 SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT666 SOT363 Type number
4. Marking
Table 5: PEMD19 PUMD19
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code [1] 6E T4*
Type number
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9397 750 14408
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 February 2005
2 of 11
Philips Semiconductors
PEMD19; PUMD19
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
5. Limiting values
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IO ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666
[1] [2]
Conditions open emitter open base open collector
Min -
Max 50 50 5 100 100 200 200 +150 150 +150
Unit V V V mA mA mW mW °C °C °C
Per transistor; for the PNP transistor with negative polarity
Tamb ≤ 25 °C
[1] [1] [2]
−65 −65
storage temperature junction temperature ambient temperature Tamb ≤ 25 °C
[1] [1] [2]
-
300 300
mW mW
Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
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Table 7: Symbol Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to ambient SOT363 SOT666 Conditions Tamb ≤ 25 °C
[1] [1] [2]
Mi.