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PEMH19 Dataheets PDF



Part Number PEMH19
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description NPN/PNP resistor-equipped transistors
Datasheet PEMH19 DatasheetPEMH19 Datasheet (PDF)

PEMD19; PUMD19 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open Rev. 01 — 17 February 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Package Philips PEMD19 PUMD19 SOT666 SOT363 JEITA SC-88 PNP/PNP complement PEMB19 PUMB19 NPN/NPN complement PEMH19 PUMH19 Type number 1.2 Features s s s s Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applica.

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PEMD19; PUMD19 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open Rev. 01 — 17 February 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Package Philips PEMD19 PUMD19 SOT666 SOT363 JEITA SC-88 PNP/PNP complement PEMB19 PUMB19 NPN/NPN complement PEMH19 PUMH19 Type number 1.2 Features s s s s Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applications s Low current peripheral driver s Control of IC inputs s Replacement of general-purpose transistors in digital applications www.DataSheet4U.com 1.4 Quick reference data Table 2: Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) Conditions open base Min 15.4 Typ 22 Max 50 100 28.6 Unit V mA kΩ Philips Semiconductors PEMD19; PUMD19 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open 2. Pinning information Table 3: Pin 1 2 3 4 5 6 Pinning Description GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 TR1 Simplified outline 6 5 4 Symbol 6 5 4 R1 TR2 1 2 3 001aab555 R1 1 2 3 006aaa269 3. Ordering information Table 4: Ordering information Package Name PEMD19 PUMD19 SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT666 SOT363 Type number 4. Marking Table 5: PEMD19 PUMD19 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code [1] 6E T4* Type number www.DataSheet4U.com 9397 750 14408 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 17 February 2005 2 of 11 Philips Semiconductors PEMD19; PUMD19 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IO ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 [1] [2] Conditions open emitter open base open collector Min - Max 50 50 5 100 100 200 200 +150 150 +150 Unit V V V mA mA mW mW °C °C °C Per transistor; for the PNP transistor with negative polarity Tamb ≤ 25 °C [1] [1] [2] −65 −65 storage temperature junction temperature ambient temperature Tamb ≤ 25 °C [1] [1] [2] - 300 300 mW mW Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 6. Thermal characteristics www.DataSheet4U.com Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT363 SOT666 Conditions Tamb ≤ 25 °C [1] [1] [2] Mi.


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