DYNAMIC RAM MODULE
This version: Mar. 1999
Semiconductor MSC23CV43257D-xxBS8
4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE T...
Description
This version: Mar. 1999
Semiconductor MSC23CV43257D-xxBS8
4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV43257D-xxBS8 is a fully decoded, 4,194,304-word x 32-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in TSOP packages mounted with eight decoupling capacitors on a 72-pin glass epoxy small outline package. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 4,194,304-word x 32-bit organization · 72-pin Small Outline Dual In-line Memory module MSC23CV43257D-xxBS8 : Gold tab · Single +3.3V supply ± 0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO capability · Multi-bit test mode capability · 11/11 Addressing (Row/Column)
PRODUCT FAMILY
Access Time (Max.)
www.DataSheet4U.com Family
tRAC 60ns 70ns
tAA 30ns 35ns
tCAC 15ns 20ns
Cycle Time (Min.) 104ns 124ns
Power Dissipation
Operating (Max.) Standby (Max.)
MSC23CV43257D-60BS8 MSC23CV43257D-70BS8
2592mW 14.4mW 2304mW
Semiconductor
MSC23CV43257D
MODULE OUTLINE
MSC23CV43257D-xxBS8
(Unit : mm) 3.80Max.
25.4±0.13
3.18±0.13 2.0±0.13
1 2.62Typ. *1
71
5.5Min.
44.45±0.1 59.69±0.2
1.00±0.1
*1 The common size difference of the board width 19.78mm of its height is specified as ±0.2. The value above 19.78mm is specified...
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