LY61L25616

® LY61L25616 Rev. 2.1 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 2.0 Description Initial Issue Added Extended Grade Added PKG Type : 48-ball 6mm x 8mm TFBGA Revised ICC and ISB1 Added I grade Revised VTERM to VT1 and VT2 Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date May.24.2006 Jan.22.2007 Jan.30.2007 Jun.23.2007 Rev.2.1 Apr.17.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY61L25616 Rev. 2.1 256K X 16 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION The LY61L25616 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L25616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY61L25616 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 10/12/15/20/25ns „ Very low power consumption: Operating current: 180/160/140/80/70mA(...