LY6164

® LY6164 Rev. 1.2 8K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised STSOP Package Outline Dimension Revised Test Condition of ISB1/IDR Revised VTERM to VT1 and VT2 Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Aug.3.2005 Mar.26.2008 Apr.17.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY6164 Rev. 1.2 8K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION The LY6164 is a 65,536-bit high speed CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6164 is well designed for high speed system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY6164 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 8/10/12/15ns „ Low power consumption: Operating current : 110/100/90/80mA (TYP.) Standby current : 1mA (TYP.) „ Single 5V power supply „ All inputs and outputs TTL compatible „...