LY626416

® LY626416 Rev. 1.4 64K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised typos in page 1,4,5(35ns to 45ns) Added ISB1 /IDR values when TA = 25℃ and TA = 40℃ Revised ISB1 (MAX) of SL grade Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised ISB1/IDR(MAX) when TA = 25℃ and TA = 40℃ Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised VDR Issue Date Oct.30.2007 Nov.2.2007 Mar.30.2009 Rev. 1.3 Rev. 1.4 Apr.13.2009 Sep.11.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY626416 Rev. 1.4 64K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY626416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY626416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY626416 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 45/55/70ns „ Low power consumption: ...