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APT60GA60JD60 Dataheets PDF



Part Number APT60GA60JD60
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description High Speed PT IGBT
Datasheet APT60GA60JD60 DatasheetAPT60GA60JD60 Datasheet (PDF)

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive. The intrinsic chip gate res.

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