APT60GA60JD60

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT60GA60JD60 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) file # E145592 FEATURES Fast switching with low EMI Very Low Eoff for maximum efficiency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 112 60 178 ±30 356 178A @ 600V -55 to 150 Unit V A V W PD Total Power Dissipation @ TC = 25°C www.DataSheet4U.com SSOA TJ, TSTG Sw...