RADIATION HARDENED POWER MOSFET
PD - 91741A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7460SE Radiation Lev...
Description
PD - 91741A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A
IRHNB7460SE 500V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
®
SMD-3
International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
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Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Pre-Irradiation
Units
20 12 80 300 2.4 ±20 500 20 30 3.8 -55 to 150 300 (for 5 sec.) 3.5(Typical)
Parameter
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse...
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