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ST333C Dataheets PDF



Part Number ST333C
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Inverter Grade Thyristors
Datasheet ST333C DatasheetST333C Datasheet (PDF)

ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt TO-200AB (E-PUK) RoHS COMPLIANT • International standard case TO-200AB (E-PUK) • High surge current capability • Low thermal impedance • High speed performance • Lead (Pb)-free PRODUCT SUMMARY IT(AV) 720 A TYPICAL APPLICATIONS • Inverters • Choppers • Induc.

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ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt TO-200AB (E-PUK) RoHS COMPLIANT • International standard case TO-200AB (E-PUK) • High surge current capability • Low thermal impedance • High speed performance • Lead (Pb)-free PRODUCT SUMMARY IT(AV) 720 A TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 720 Ths 55 1435 Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range 25 11 000 A 11 500 605 553 400 to 800 10 to 30 - 40 to 125 V µs °C kA2s UNITS A °C A °C IT(RMS) www.DataSheet4U.com I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 ST333C..C Document Number: 93678 Revision: 15-May-08 For technical questions, contact: [email protected] www.vishay.com 1 ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A CURRENT CARRYING CAPABILITY ITM 180° el 180° el ITM 100 µs ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit 1630 1630 1350 720 50 VDRM 50 40 10/0.47 1420 1390 1090 550 2520 2670 2440 1450 50 VDRM - 2260 2330 2120 1220 7610 4080 2420 1230 50 VDRM - 6820 3600 2100 1027 V A/µs 55 10/0.47 °C Ω/µF A 55 40 10/0.47 55 40 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms I2√t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 720 (350) 55 (75) 1435 11 000 11 500 9250 Sinusoidal half wave, initial TJ = TJ maximum 9700 605 553 428 391 6050 1.96 0.91 0.93 0.58 0.58 600 1000 mΩ mA V kA2√s kA2s A UNITS A °C www.DataSheet4U.com Maximum I2√t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current t = 0.1 to 10 ms, no voltage reapplied ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum TJ = 25 °C, IT > 30 A TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code 10 VALUES MIN. MAX. 1000 1.1 µs 30 UNITS A/µs Maximum turn-off time tq www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93678 Revision: 15-May-08 ST333C..C Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/µs mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled.


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