FGAF40N60UF

FGAF40N60UF — 600 V PT IGBT November 2013 FGAF40N60UF 600 V PT IGBT General Description Fairchild's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature. Features High Speed Switching Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A High Input Impedance Applications General Inverter, PFC C TO-3PF GCE Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25C @ TC = 100C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25C @ TC = 100C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E Ratings 600  20 40 20 160 100 40 -55 to +150 -55 to +150 300 Typ. --- Max. 1.2 40 Unit V V A A A W W C C C Unit C/W C/W ©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. C1 www.fairchildsemi.com FGAF40N60UF — 600 V PT IGBT Electrical Characteristics of the IGBT TC = 25C unless otherwise noted Symbol Parameter Test Conditions Mi...