BA592WS

BA592WS SILICON RF SWITCHING DIODE Features Very low forward resistance Small capacitance PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 Applications For band switching in TV/VTR tuners and mobile applications 1 W4 Top View Marking Code: "W4" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Diode Reverse Voltage Forward Current Junction Temperature Operating Temperature Range Storage Temperature Range Symbol VR IF TJ Top Tstg Value 35 100 150 - 55 to + 125 - 55 to + 150 Unit V mA O C C C O O Electrical Characteristics at Ta = 25 OC Parameter Reverse Current at VR = 20 V www.DataSheet4U.com Forward Voltage at IF = 100 mA Diode Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz Reverse Parallel Resistance at VR = 0 V, f = 100 MHz Forward Resistance at IF = 3 mA, f = 100 MHz at IF = 10 mA, f = 100 MHz Series Inductance Symbol IR VF CT RP rf Ls Min. 0.65 0.6 Typ. 100 Max. 20 1 1.4 1.1 Unit nA V pF KΩ - 1.8 0.7 0.5 - Ω nH SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 BA592WS Diode capacitance CT=f(VR) f=Parameter 2 Reverse current RP=f(VR) f=Parameter 10 3 Rp(kohm) 1MHz 1GHz 1.6 10 2 CT(pF) 1.2 10 0.8 1 10 0.4 0 0 0 5 10 15 20 25 30 10 -1 0 5 10 15 20 25 30 VR (V) VR (V) Forward resistance rf=f(IF) f=100MHz 10 2 Forward current IF=f(VF) TA=Parameter 10 0 rf (Ohm) 1...