SI5461EDC

Si5461EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --20 rDS(on) (Ω) 0.045 @ VGS = --4.5 V 0.060 @ VGS = --2.5 V 0.082 @ VGS = --1.8 V ID (A) --6.2 --5.4 --4.6 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 kΩ Marking Code LA XX Lot Traceability and Date Code Bottom View Part # Code D P-Channel MOSFET Ordering Information: Si5461EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25_C TA = 85_C ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg 5 secs Steady State --20 12 Unit V www.DataSheet4U.com Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d --6.2 --4.5 --20 --2.1 2.5 1.3 --55 to 150 260 --4.5 --3.2 --1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. When using HBM. The MM rating is 300 V. c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not requi...