ST8550

ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 C O Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE(on) fT COB Min. 45 120 160 40 40 25 6 120 - Value 40 25 6 2 100 1 150 - 55 to + 150 Typ. 15 Max. 200 300 100 100 0.5 1.2 1 - Unit V V V A mA W O C C Unit nA nA V V V V V V MHz pF O Parameter DC Current Gain at -VCE = 1 V, -IC = 5 mA at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 1.5 A Collector Base Cutoff Current www.DataSheet4U.com at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter On Voltage at -IC = 10 mA, -VCE = 1 V Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA Collector Base C...