SMT810

SMT810 ♦Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 810nm. ♦Outer dimension（Unit:mm） TOP IR LED SMT810 AlGaAs 810ｎｍ ｔｙｐ. Silver Plated PPA Resin Epoxy Resin ♦Absolute Maximum Rating Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 190 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C -30 ~ +80 °C Storage Temperature TSTG Soldering Temperature TSOL 240 °C www.DataSheet4U.com ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C ♦Electro-Optical Characteristics [Ta=25°C] Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 5.0 Radiant Intensity IE IF=50mA 3.0 Peak Wavelength IF=50mA λP Half Width IF=50mA Δλ Viewing Half Angle IF=50mA θ 1/2 Rise Time tr ＩF=50mA Fall Time tf ＩF=50mA ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Typical 1.60 10.0 6.0 810 40 ±55 60 40 Maximum 1.80 10 Unit V uA mW mW/sr nm nm deg. ns ns Marubeni America Corp...