2SA1962

2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC www.DataSheet4U.com IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -230 -230 -5 -15 -1.5 130 1.04 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 0.96 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation...