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SMX1J Dataheets PDF



Part Number SMX1J
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description TVS Clamping Diodes
Datasheet SMX1J DatasheetSMX1J Datasheet (PDF)

SMX1J Transil™ Features ■ A Peak pulse power: – 85 W (10/1000 µs) – 800 W (8/20 µs) Stand off voltage 7.5 V Unidirectional Low leakage current: – 1 µA at 25 °C – 2 µA at 85 °C Operating Tj max: 150 °C High power capability at Tjmax: 78 W K ■ ■ ■ µQFN 2L Figure 1. Functional diagram (top view) ■ ■ Complies with the following standards ■ IEC 61000-4-2 level 4 – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B – 25 kV HBM (human body model) ■ Descrip.

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SMX1J Transil™ Features ■ A Peak pulse power: – 85 W (10/1000 µs) – 800 W (8/20 µs) Stand off voltage 7.5 V Unidirectional Low leakage current: – 1 µA at 25 °C – 2 µA at 85 °C Operating Tj max: 150 °C High power capability at Tjmax: 78 W K ■ ■ ■ µQFN 2L Figure 1. Functional diagram (top view) ■ ■ Complies with the following standards ■ IEC 61000-4-2 level 4 – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B – 25 kV HBM (human body model) ■ Description The SMX1J7.5A www.DataSheet4U.com Transil has been designed to protect sensitive equipment against electro-static discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are generally for surges below 85 W 10/1000 µs. The Planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. The SMX1J7.5A is packaged in µQFN 2 leads. TM: Transil is a trademark of STMicroelectronics November 2009 Doc ID 16180 Rev 2 1/11 www.st.com 11 Characteristics SMX1J 1 Table 1. Symbol PPP Tstg Tj TL Characteristics Absolute maximum ratings (Tamb = 25 °C) Parameter Peak pulse power dissipation (1) Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s. Tj initial = Tamb Value 85 -65 to +150 -55 to +150 260 Unit W °C °C °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Symbol VBR IRM VRM VCL Rd IPP IR αT VF = = = = = = = = = Electrical characteristics (definitions) Parameter Breakdown voltage Leakage current @ VRM Stand-off voltage Clamping voltage Dynamic impedance Peak pulse current Breakdown current Voltage temperature coefficient Forward voltage drop I IF VCL VBR VRM I RM IR VF V Slope = 1/ Rd I PP Table 2. Electrical characteristics - parameter values (Tamb = 25 °C) IRM max@VRM VBR @IR min(1) min V 2 7.5 V 8.3 mA 1 VCL @IPP(2) 10/1000 µs max V 14 A 6.2 Ω 0.3 RD (3) 10/1000 µs VCL @IPP(2) 8/20 µs max V 20 A 40 Ω 0.2 RD (3) 8/20 µs αT (4) max 10-4/ °C 6.5 Type 25 °C 85 °C µA www.DataSheet4U.com SMX1J7.5A 1 1. Pulse test : tp < 50 ms 2. Surge capability given for both directions for unidirectional and bidirectional types 3. To calculate maximum clamping voltage at other surge level, use the following formula VCLmax = VCL - RD x ( IPP - IPPappli) where IPPappli is the surge current in the application 4. To calculate VBR or VCL versus junction temperature, use the following formule: VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj – 25)) VCL @ Tj = VCL @ 25 °C x (1 + αT x (Tj – 25)) Figure 3. Pulse waveform %Ipp 100 50 0 Repetitive pulse current tr = rise time (µs) tp = pulse duration time (µs) tr tp 2/11 Doc ID 16180 Rev 2 SMX1J Characteristics Figure 4. Peak pulse power dissipation versus initial junction temperature Figure 5. Peak pulse power versus exponential pulse duration 100.0 90.0 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 PPP(W) 10000 PPP (W) Tj initial = 25 °C 1000 100 Tj(°C) 0 25 50 75 100 125 150 175 10 1 10 100 1000 t P (µs) 10000 Figure 6. Clamping voltage versus peak pulse current (exponential waveform, typical values) Figure 7. Junction capacitance versus reverse applied voltage (typical values) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 10 IPP (A) 400 375 350 325 300 275 250 225 200 175 C(pF) 10/1000 µs Tjinitial = 25 °C 1 150 125 Vcl (V) 9 11 VLINE (V) 0 1 2 3 4 5 100 Figure 8. www.DataSheet4U.com 10 Forward voltage drop versus peak forward current (typical values) Figure 9. Ir I (nA) 500 Leakage current versus junction temperature (typical values) I FM (A) 400 1 300 200 0.1 100 0.01 0.5 1.0 1.5 VFM (V) 2.0 0 25 Tj (°C) ° 50 75 100 125 150 Doc ID 16180 Rev 2 3/11 Ordering information scheme SMX1J 2 Ordering information scheme Figure 10. Ordering information scheme SM X 1 J7.5 A TR Surface Mount Package X = µQFN-2L Peak Pulse Power 1 = 100 W (typical value) Stand off voltage 7.5 = 7.5 V Type A = Unidirectional Delivery mode TR = Tape and reel www.DataSheet4U.com 4/11 Doc ID 16180 Rev 2 SMX1J Package information 3 Package information ● ● ● Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Flammability: Epoxy is rated UL94V-0 RoHS package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 3. µQFN 2L dimensions Dimensions Ref Millimetres Min A A1 b1 D E e L1 0.95 0.75 0.51 0.00 0.25 Typ 0.55 0.02 0.30 1.45 1.00 1.00 0.80 Max Min Inches Typ Max 0.60 0.020 0.022 0.024 0.05 0.000 0.001 0.002 0.35 0.010 0.012 0.014 0.057 0.039 1.05 0.037 0.039 0.041 0.85 0.030 0.031 0.033 Figure 11. Footprint dimensio.


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