STW26NM60N-H
N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power MOSFET
Features
Type STW26NM60N-H
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VDSS 600 V
RDS(on) max < 0.165 Ω
ID 20 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247
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Application
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Switching applications
Description
This series of devices implements second generation MDm...
