STP7NM60N

STP7NM60N Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFET in a TO‑220 package Features TAB Order code VDS RDS(on) max. ID Package uct(s) TO-220 1 23 STP7NM60N 600 V 0.9 Ω 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 5A TO-220 Prod D(2, TAB) Applications Switching applications solete G(1) t(s) - Ob S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. roduc Product status te P STP7NM60N le Device summary so Order code STP7NM60N ObMarking 7NM60N Package TO-220 Packing Tube DS12751 - Rev 1 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STP7NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM (1) Drain current (pulsed) uc PTOT Total dissipation at TC = 25 °C d dv/dt (2) Peak diode recovery voltage slope ro Tj Operating junction temperature range te P Tstg Storage temperature ...