RJK2508DPK

RJK2508DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G0508-0200 Rev.2.00 Feb.10.2005 Features Low on-resistance Low leakage current High speed switching Outline PRSS0004ZE-A (Previous code: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 50 100 50 100 17 18.0 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.2.00 Feb.10.2005 page 1 of 6 RJK2508DPK Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery ...