PBHV8540Z

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 1.4 Quick reference data Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA Conditions VBE = 0 V open base Min 100 Typ Max 500 400 0.5 Unit V V A NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym016 Simplified outline 4 Symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name PBHV8540Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type ...