2N6107

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6107 VCBO Collector-base voltage 2N6109 2N6111 2N6107 CEO www.DataSheet4U.com CONDITIONS VALUE -40 UNIT Open emitter -60 -80 -30 V V Collector-emitter voltage 2N6109 2N6111 Open base -50 -70 V VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -7 -10 -3 V A A A W TC=25 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N6107 ICEO Collector cut-off current 2N6109 2N6111 2N6107 ICEX Collector cut-off current 2N6109 2N6111 IEBO Emitter cut-off current 2N6107 2N6109 2N6111 hFE-2 fT DC current gain Transition frequency IC=-7A;IB=-3A IC=-7A ; VCE=-4V VCE=-20V; IB=0 VCE=-4...