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UPD4664312-X

NEC

64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDE...


NEC

UPD4664312-X

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Description
PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile Specified RAM featuring Low Power Static RAM compatible function and pin configuration. The µPD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4664312-X is packed in 93-pin TAPE FBGA. Features 4,194,304 words by 16 bits organization Fast access time: 65, 75 ns (MAX.) Fast page access time: 18, 25 ns (MAX.) Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15) Low voltage operation: 2.7 to 3.1 V (-B65X) 2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X) Operating ambient temperature: TA = –25 to +85 °C Output Enable input for easy application Chip Enable input: /CS pin Standby Mode input: MODE pin Standby Mode1: Normal standby (Memory cell data hold valid) Standby Mode2: Density of memory cell data hold is variable www.DataSheet4U.com µPD4664312 Access time ns (MAX.) Operating supply voltage V Chip I/O – Operating ambient temperature °C –25 to +85 45 40 At operating mA (MAX.) Supply current At standby µA (MAX.) Density of data hold 64M bits 16M bits 8M bits 4M bits 100 60 50 45 0M bit 10 -B65X -BE75X Note 65 75 2.7 to 3.1 2.7 to 3.1 1.65 to 2.1 Note Under development The information in this document is subject to change without notice. Befor...




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