64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4664312-X
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDE...
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4664312-X
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile Specified RAM featuring Low Power Static RAM compatible function and pin configuration. The µPD4664312-X is fabricated with advanced CMOS technology using one-
transistor memory cell. The µPD4664312-X is packed in 93-pin TAPE FBGA.
Features
4,194,304 words by 16 bits organization Fast access time: 65, 75 ns (MAX.) Fast page access time: 18, 25 ns (MAX.) Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15) Low voltage operation: 2.7 to 3.1 V (-B65X) 2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X) Operating ambient temperature: TA = –25 to +85 °C Output Enable input for easy application Chip Enable input: /CS pin Standby Mode input: MODE pin Standby Mode1: Normal standby (Memory cell data hold valid) Standby Mode2: Density of memory cell data hold is variable
www.DataSheet4U.com µPD4664312
Access time ns (MAX.)
Operating supply voltage V Chip I/O –
Operating ambient temperature °C –25 to +85 45 40 At operating mA (MAX.)
Supply current At standby µA (MAX.) Density of data hold 64M bits 16M bits 8M bits 4M bits 100 60 50 45 0M bit 10
-B65X -BE75X Note
65 75
2.7 to 3.1
2.7 to 3.1 1.65 to 2.1
Note Under development
The information in this document is subject to change without notice. Befor...