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UPD4632312A-X

NEC

32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTEND...


NEC

UPD4632312A-X

File Download Download UPD4632312A-X Datasheet


Description
PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312A-X is a high speed, low power, 33,554,432 bits (2,097,152 words by 16 bits) CMOS Mobile Specified RAM featuring Low Power Static RAM compatible function and pin configuration. The µPD4632312A-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4632312A-X is packed in 48-pin TAPE FBGA. Features 2,097,152 words by 16 bits organization Fast access time: 60, 65, 75, 85 ns (MAX.) Fast page access time: 18, 25, 30 ns (MAX.) Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15) Low voltage operation: 2.7 to 3.1 V (-B60X, -B65X) 2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X, -BE85X) Operating ambient temperature: TA = –25 to +85 °C Output Enable input for easy application Chip Enable input: /CS pin Standby Mode input: MODE pin Standby Mode1: Normal standby (Memory cell data hold valid) Standby Mode2: Density of memory cell data hold is variable www.DataSheet4U.com µPD4632312A Access time ns (MAX.) Operating supply voltage V Chip I/O – Operating ambient At operating Supply current At standby µA (MAX.) Density of data hold 32M bits 16M bits 8M bits 4M bits 50 45 100 70 60 50 0M bit 30 temperature mA (MAX.) °C –25 to +85 -B60X Note, -B65X -BE75X Note 60, 65 Note 2.7 to 3.1 , -BE85X 75, 85 2.7 to 3.1 1.65 to 2.1 Note Under development The in...




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