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UPD4616112-X

Part Number	UPD4616112-X
Manufacturer	NEC
Description	16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Published	Nov 27, 2009
Detailed Description	DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATU...
Datasheet	UPD4616112-X PDF File

Overview

DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The µPD4616112-X is packed in 48-pin TAPE FBGA.
Features • 1,048,576 words by 16 bits organization • Fast access time: 85, 95 ns (MAX.
) • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) • Low voltage operation: VCC = 2.
6 to 3.
1 V • Operating ambient temperatu...

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