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2SK4002

Toshiba Semiconductor

N-Channel MOSFET

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converte...


Toshiba Semiconductor

2SK4002

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Description
2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 4.2 Ω (typ.) 5.2±0.2 0.6 MAX. : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.6 5.5±0.2 : |Yfs| = 1.7 S (typ.) : IDSS = 100 μA (max) (VDS = 600 V) 0.9 1.1±0.2 4.1±0.2 5.7 0.6 MAX Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 Unit V V V 0.8 MAX. 1.1 MAX. 1 2.3 2.3 2.3±0.2 0.6±0.15 0.6±0.15 2 3 A A A W mJ A mJ °C °C Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) JEDEC JEITA ― ― 2-7J2B 8 20 93 2 2 150 −55~150 TOSHIBA Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Weight: 0.36 g (typ.) www.DataSheet4U.com Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pleas...




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