S8559

PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors s Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature www.DataSheet4U.com s Electrical and Symbol VR Max. Topr Tstg Value 5 -10 to +60 -20 to +70 Unit V °C °C optical characteristics (without scintillator, Ta=25 °C) Symbol λ λp S ID Ct Condition Min. Typ. 190 to 1000 720 0.26 2 950 Max. 50 Unit nm nm A/W pA pF Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance λ=500 nm VR=10 mV VR=0 V, f=10 kHz s X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 nm) X-ray tube voltage 120 kV Note) Depends on equipment and measurement conditions. Typ. 52 Unit nA Handling precautions Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence. 1 Si photodiode s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) 100 nF S8559 s Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 100 pA TERMINAL CAPACITANCE 0.1 1 10 DARK CURRENT 10 nF 10 pA 1 nF 1 pA 100 fA 0.01 100 pF 0.1 1 10 REVERSE VOLTAGE (V) KSPDB0152EA REVERSE VOLTAGE (V) KSPDB0153EA s Dimensional outline (unit: mm) 10.1 ± 0.1 8.9 ± 0.1 CsI (TI) 7.9 PHOTOSENSITIVE SURFACE 4.85 0.3 www.DataSheet4U....